PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS

被引：89

作者：

DENISSE, CMM ^{[1
]}

TROOST, KZ ^{[1
]}

ELFERINK, JBO ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

VANDEWEG, WF ^{[1
]}

HENDRIKS, M ^{[1
]}

机构：

[1] ADV SEMICOND MAT EUROPE BV,3723 BS BILTHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2536 / 2542

页数：7

共 27 条

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[3]

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[4]

CLAASSEN WAP, 1985, THIN SOLID FILMS, V129, P239, DOI 10.1016/0040-6090(85)90051-3

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[6] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS [J].

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[7]

CLAASSEN WAP, 1985, 7TH P INT S PLASM CH, V1, P130

[8] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

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JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2543-2547

[9]

ELFERINK JBO, UNPUB SURF INTERFACE

[10] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J].

FUJITA, S ;

ZHOU, NS ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L100-L102

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