PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS

被引：89

作者：

DENISSE, CMM ^{[1
]}

TROOST, KZ ^{[1
]}

ELFERINK, JBO ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

VANDEWEG, WF ^{[1
]}

HENDRIKS, M ^{[1
]}

机构：

[1] ADV SEMICOND MAT EUROPE BV,3723 BS BILTHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2536 / 2542

页数：7

相关论文

共 27 条

[1] A COMPARISON BETWEEN SILICON-NITRIDE FILMS MADE BY PCVD OF N2-SIH4/AR AND N2-SIH4/HE
ALLAERT, K
VANCALSTER, A
LOOS, H
LEQUESNE, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1763 - 1766
[2] COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS
ANDERSON, GW
SCHMIDT, WA
COMAS, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 424 - 430
[3] CLAASEN WAP, UNPUB
[4] CLAASSEN WAP, 1985, THIN SOLID FILMS, V129, P239, DOI 10.1016/0040-6090(85)90051-3
[5] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS
CLAASSEN, WAP
VALKENBURG, WGJN
HABRAKEN, FHPM
TAMMINGA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2419 - 2423
[6] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS
CLAASSEN, WAP
VALKENBURG, WGJN
WILLEMSEN, MFC
VANDERWIJGERT, WM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 893 - 898
[7] CLAASSEN WAP, 1985, 7TH P INT S PLASM CH, V1, P130
[8] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS
DENISSE, CMM
TROOST, KZ
HABRAKEN, FHPM
VANDERWEG, WF
HENDRIKS, M
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2543 - 2547
[9] ELFERINK JBO, UNPUB SURF INTERFACE
[10] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD
FUJITA, S
ZHOU, NS
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L100 - L102