A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS

被引:1337
作者
VOGL, P
HJALMARSON, HP
DOW, JD
机构
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV GRAZ,INST THEORET PHYS,A-8036 GRAZ,AUSTRIA
关键词
D O I
10.1016/0022-3697(83)90064-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:365 / 378
页数:14
相关论文
共 49 条
[1]   MODEL POTENTIAL FOR POSITIVE IONS [J].
ABARENKOV, IV ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (117) :529-+
[2]   DEEP ENERGY-LEVELS FOR DEFECTS AT THE ALAS (110) SURFACE [J].
ALLEN, RE ;
DOW, JD .
APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :362-367
[3]   ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].
ALLEN, RE ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426
[4]   THEORY OF DEEP TRAPS AT SEMICONDUCTOR INTERFACES [J].
ALLEN, RE ;
BUISSON, JP ;
DOW, JD .
APPLIED PHYSICS LETTERS, 1981, 39 (12) :975-976
[5]  
ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6
[6]  
ALLEN RE, 1980, INT J QUANTUM CHEM S, V14, P607
[7]  
[Anonymous], ELECTRONIC STRUCTURE
[8]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[9]   GENERAL THEORY OF PSEUDOPOTENTIALS [J].
AUSTIN, BJ ;
SHAM, LJ ;
HEINE, V .
PHYSICAL REVIEW, 1962, 127 (01) :276-&
[10]   CHEMICAL PSEUDOPOTENTIAL APPROACH TO COVALENT BONDING .2. BOND LENGTHS AND BOND-ENERGIES IN DIAMOND, SILICON AND GRAPHITE [J].
BULLETT, DW .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (17) :2707-2714