CHARGE TRANSPORT THROUGH LAYERS OF THERMALLY NITRIDED SIO2

被引：2
作者：
EFIMOV, VM
ESAEV, DG
MEERSON, EE
LOGVINSKII, LM
PEROV, GN
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 98卷 / 01期
关键词：
D O I：
10.1002/pssa.2210980137
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：319 / 327
页数：9
相关论文
共 50 条
  • [31] THE PHYSICS OF SIO2 LAYERS
    VERWEY, JF
    AMERASEKERA, EA
    BISSCHOP, J
    REPORTS ON PROGRESS IN PHYSICS, 1990, 53 (10) : 1297 - 1331
  • [32] Charge transport in thick SiO2-based dielectric layers
    Kanitz, S
    SOLID-STATE ELECTRONICS, 1997, 41 (12) : 1895 - 1902
  • [33] Charge transport in thick SiO2-based dielectric layers
    Siemens Corporate Research and, Development, Munich, Germany
    Solid State Electron, 12 (1895-1902):
  • [34] ANALYSIS OF ION-SCATTERING BY THIN SIO2 LAYERS IN BORON IMPLANTS THROUGH SIO2 INTO SILICON
    PARK, CH
    KLEIN, KM
    YANG, SH
    TASCH, AF
    SIMONTON, RB
    LUX, GE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1690 - 1695
  • [35] Thermally stimulated current in SiO2
    Fleetwood, DM
    Reber, RA
    Riewe, LC
    Winokur, PS
    MICROELECTRONICS RELIABILITY, 1999, 39 (09) : 1323 - 1336
  • [36] INSTABILITIES IN THERMALLY GROWN SIO2
    NICOLLIAN, EH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C85 - C85
  • [37] CHARGE TRAPPING IN SIO2
    YOUNG, DR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C138 - C138
  • [38] CHARGE TRAPPING IN SIO2
    YOUNG, DR
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 1 - 7
  • [39] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS
    BOESCH, HE
    MCLEAN, FB
    MCGARRITY, JM
    AUSMAN, GA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167
  • [40] Charge transport property in hybrid film electret PVDF/SiO2
    Bai, Wei
    Yang, Daben
    Dianzi Keji Daxue Xuebao/Journal of University of Electronic Science and Technology of China, 1995, 24 (03):
12345