GROWTH OF SI SINGLE-CRYSTALS FROM MELT AND IMPURITY INCORPORATION MECHANISMS

被引：68

作者：

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO LTD,2-13-1 ISOBE,ANNAKA 379-01,GUMMA,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期

关键词：

D O I：

10.1016/0022-0248(74)90358-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：463 / 467

页数：5

共 12 条

[1]

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[3]

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FRANK FC, 1949, DISC FARADAY SOC, P67

[7] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J].

HALL, RN .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :836-839

[8] A COMPETITIVE ADSORPTION MODEL OF STEADY-STATE GROWTH OF A CRYSTAL FROM A LIGHTLY-DOPED MELT [J].

HOLMES, PJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (11) :1239-&

[9]

Jackson KA, 1958, LIQUID METALS SOLIDI, P174

[10] IMPURITY DISTRIBUTION IN SINGLE CRYSTALS .4. GROWTH CHARACTERISTICS AND IMPURITY INCORPORATION DURING FACET GROWTH [J].

MORIZANE, K ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :747-&

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