SUB-BAND-GAP LASER MICROMACHINING OF LITHIUM-NIOBATE

被引:33
作者
CHRISTENSEN, FK [1 ]
MULLENBORN, M [1 ]
机构
[1] TECH UNIV DENMARK,CTR MIKROELEKTRON,DK-2800 LYNGBY,DENMARK
关键词
D O I
10.1063/1.113470
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106μm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers.© 1995 American Institute of Physics.
引用
收藏
页码:2772 / 2773
页数:2
相关论文
共 8 条
[1]   LASER-DRIVEN CHEMICAL-REACTION FOR ETCHING LINBO3 [J].
ASHBY, CIH ;
BRANNON, PJ .
APPLIED PHYSICS LETTERS, 1986, 49 (08) :475-477
[2]  
BEESON KW, 1989, MAT RES S C, V129, P321
[3]   LASER ETCHING OF LINBO3 IN A CL2 ATMOSPHERE [J].
BEESON, KW ;
HOULDING, VH ;
BEACH, R ;
OSGOOD, RM .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :835-840
[4]  
CHRISTENSEN FK, 1994, IEEE ULTRASON S P, P391
[5]   INFLUENCE OF THE BEAM SPOT SIZE ON ABLATION RATES IN PULSED-LASER PROCESSING [J].
EYETT, M ;
BAUERLE, D .
APPLIED PHYSICS LETTERS, 1987, 51 (24) :2054-2055
[6]   3-DIMENSIONAL NANOSTRUCTURES BY DIRECT LASER ETCHING OF SI [J].
MULLENBORN, M ;
DIRAC, H ;
PETERSEN, JW .
APPLIED SURFACE SCIENCE, 1995, 86 (1-4) :568-576
[7]   OPTICAL-ABSORPTION EDGE OF LINBO3 [J].
REDFIELD, D ;
BURKE, WJ .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4566-4571
[8]  
1989, DATA REV SERIES, V5