MAGNETOTRANSPORT STUDIES OF CHARGE ACCUMULATION IN AN ALLNAS/GALNAS TUNNELING STRUCTURE

被引：9

作者：

BENAMOR, S

MARTIN, KP

RASCOL, JJL

HIGGINS, RJ

POTTER, RC

LAKHANI, AA

HIER, H

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

[2] ALLIED SIGNAL AEROSP CO,AEROSP TECHNOL CTR,COLUMBIA,MD 21045

[3] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02138

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1908 / 1910

页数：3

共 13 条

[1] TRANSVERSE MAGNETIC-FIELD DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-BARRIER QUANTUM WELL TUNNELING STRUCTURES [J].

BENAMOR, S ;

MARTIN, KP ;

RASCOL, JJL ;

HIGGINS, RJ ;

TORABI, A ;

HARRIS, HM ;

SUMMERS, CJ .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2540-2542

[2] MULTIPLE NEGATIVE TRANSCONDUCTANCE AND DIFFERENTIAL CONDUCTANCE IN A BIPOLAR-TRANSISTOR BY SEQUENTIAL QUENCHING OF RESONANT TUNNELING [J].

CAPASSO, F ;

SEN, S ;

CHO, AY ;

SIVCO, DL .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1056-1058

[3]

CHROBOSHECK JA, 1984, 17TH P INT C PHYS SE, P696

[4] SEQUENTIAL TUNNELING DUE TO INTERSUBBAND SCATTERING IN DOUBLE-BARRIER RESONANT TUNNELING DEVICES [J].

EAVES, L ;

TOOMBS, GA ;

SHEARD, FW ;

PAYLING, CA ;

LEADBEATER, ML ;

ALVES, ES ;

FOSTER, TJ ;

SIMMONDS, PE ;

HENINI, M ;

HUGHES, OH ;

PORTAL, JC ;

HILL, G ;

PATE, MA .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :212-214

[5] RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 35 (17) :9387-9390

[6] EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 36 (14) :7635-7637

[7] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE [J].

INATA, T ;

MUTO, S ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L983-L985

[8] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J].

LEADBEATER, ML ;

ALVES, ES ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

SHEARD, FW ;

TOOMBS, GA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :1060-1062

[9] RESONANT MAGNETOTUNNELING IN GAALAS-GAAS-GAALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

ESAKI, L ;

WANG, WI .

PHYSICAL REVIEW B, 1986, 33 (04) :2893-2896

[10] 3-DIMENSIONAL INTEGRATION OF RESONANT TUNNELING STRUCTURES FOR SIGNAL-PROCESSING AND 3-STATE LOGIC [J].

POTTER, RC ;

LAKHANI, AA ;

BEYEA, D ;

HIER, H ;

HEMPFLING, E ;

FATHIMULLA, A .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2163-2164

← 1 2 →