IMPLICATION OF AMORPHOUS-LIKE RAMAN-SPECTRA OF GAS-EVAPORATED SI AND GE MICROCRYSTALS

被引：45
作者：
HAYASHI, S
ABE, H
机构：
[1] Kyoto Inst of Technology, Dep of, Electrical Engineering, Kyoto, Jpn, Kyoto Inst of Technology, Dep of Electrical Engineering, Kyoto, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期
关键词：
D O I：
10.1143/JJAP.23.L824
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：L824 / L826
页数：3
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