INTERFACE STATES GENERATED BY THE INJECTION OF ELECTRONS AND HOLES INTO SIO2

被引：10
作者：
LYON, SA
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90471-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：552 / 564
页数：13
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