INTERFACE STATES GENERATED BY THE INJECTION OF ELECTRONS AND HOLES INTO SIO2

被引：10

作者：

LYON, SA

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90471-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：552 / 564

页数：13

相关论文

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