SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR MADE BY MOLECULAR-BEAM EPITAXY

被引：22
作者：
NAROZNY, P
DAMBKES, H
KIBBEL, H
KASPER, E
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期
关键词：
D O I：
10.1109/16.40923
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2363 / 2366
页数：4
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