THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING

被引：505

作者：

TAKAHAGI, T ^{[1
]}

NAGAI, I ^{[1
]}

ISHITANI, A ^{[1
]}

KURODA, H ^{[1
]}

NAGASAWA, Y ^{[1
]}

机构：

[1] TORAY RES CTR INC,OTSU,SHIGA,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3516 / 3521

页数：6

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