VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS

被引：1232

作者：

KASTNER, M

ADLER, D

FRITZSCHE, H

机构：

[1] MIT,CTR MAT SCI & ENGN,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[3] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

[4] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 37卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.37.1504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1504 / 1507

页数：4

相关论文

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