SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS

被引：60

作者：

SINHA, AK ^{[1
]}

SMITH, TE ^{[1
]}

LEVINSTEIN, HJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 05期

关键词：

D O I：

10.1109/T-ED.1975.18111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：218 / 224

页数：7

共 12 条

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[8] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J].

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[9] ELECTRICAL CHARACTERISTICS AND THERMAL-STABILITY OF PLATINUM SILICIDE-TO-SILICON OHMIC CONTACTS METALIZED WITH TUNGSTEN [J].

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[10] THERMAL-STABILITY OF THIN PTSI FILMS ON SILICON SUBSTRATES [J].

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