CORRELATION BETWEEN ELECTRICAL-PROPERTIES AND THERMAL-STABILITY IN NI-SI-B METALLIC GLASSES

The temperature coefficient of resistivity (TCR), specific resistivity rho //3//0//0//K, crystallization temperature T//x and activation energy E//a for crystallization in various Ni-Si-B metallic glasses were measured and relationships among them were examined. It was found that the values of TCR decreased with increasing metalloid (Si, B) contents and by substituting silicon atoms for boron atoms, but conversely the values of rho //3//0//0//K, T//x and E//a increased. A very close correlation was observed between TCR and T//x or E//a. The compositional dependences of TCR, rho //3//0//0//K, T//x and E//a and good correlations among them can be explained qualitatively by considering the short-range structure and the directional chemical bonding between nickel and silicon or boron atoms.