OBSERVATION OF DEFECTS AND TETRAGONAL DISTORTIONS IN INXGA1-XAS/GAAS(001) HETEROSTRUCTURES BY TEM

被引：2

作者：

ATICI, Y ^{[1
]}

机构：

[1] UNIV BRISTOL,HH WILLS PHYS LAB,BRISTOL BS8 1TL,AVON,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 156卷 / 03期

关键词：

D O I：

10.1016/0022-0248(95)00272-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The misfit dislocations at the interfaces of two different In0.09Ga0.91As/GaAs(001) heterostructures have been analysed by transmission electron microscopy using plan-view and cross-sectional specimens. The structures present 60 degrees type misfit dislocations with 1/2 [110] {111} slip system. The spacing of misfit dislocations, using cross-sectional specimens, is measured at the individual interfaces in the heterostructures. Tetragonal distortions in the InGaAs epilayers are detected using convergent-beam electron diffraction. A computer simulation matching procedure shows a small contraction and expansion in a and c respectively.

引用

页码：147 / 154

页数：8

共 23 条

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