ELECTRICAL CHARACTERISTICS OF MULTICHIP MODULE INTERCONNECTS WITH PERFORATED REFERENCE PLANES
被引:17
作者:
CANGELLARIS, AC
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机构:Center for Electronic Packaging Research, Department of Electrical and Computer Engineering, University of Arizona, Tucson
CANGELLARIS, AC
GRIBBONS, M
论文数: 0引用数: 0
h-index: 0
机构:Center for Electronic Packaging Research, Department of Electrical and Computer Engineering, University of Arizona, Tucson
GRIBBONS, M
PRINCE, JL
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h-index: 0
机构:Center for Electronic Packaging Research, Department of Electrical and Computer Engineering, University of Arizona, Tucson
PRINCE, JL
机构:
[1] Center for Electronic Packaging Research, Department of Electrical and Computer Engineering, University of Arizona, Tucson
来源:
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY
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1993年
/
16卷
/
01期
关键词:
D O I:
10.1109/33.214867
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A quasi-TEM approach is demonstrated for the equivalent transmission line characterization of multichip-module (MCM) interconnects with perforated (mesh) reference planes. The proposed method can be used to obtain effective transmission line parameters for both single and coupled interconnects, which in turn can be used directly in SPICE-like waveform simulation tools for an overall electrical analysis of complex MCM interconnect nets. Comparisons to experimental results obtained from the literature, as well as results obtained from full-wave modeling of the interconnect structures, demonstrate the validity of the proposed approach and help define the frequency range of its accuracy.