ACCURATE MEASUREMENTS OF THE SILICON INTRINSIC CARRIER DENSITY FROM 78-K TO 340-K

被引：100

作者：

MISIAKOS, K ^{[1
]}

TSAMAKIS, D ^{[1
]}

机构：

[1] NATL TECH UNIV ATHENS,DEPT ELECT ENGN,GR-10682 ATHENS,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.354551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of n(i) was found to be (9.7 +/- 0.1) X 10(9) cm-3.

引用

页码：3293 / 3297

页数：5

共 3 条

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