THE AHARONOV-BOHM EFFECT IN NARROW-BAND SEMICONDUCTORS

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作者：
BOGACHEK, EN
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FIZIKA NIZKIKH TEMPERATUR | 1990年 / 16卷 / 10期
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O59 [应用物理学];
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摘要：
The Aharonov - Bohm effect in non-singly connected semiconductors is investigated. The effect is reflected in an oscillating dependence of magnetic moment (as well as of persistent current) with fundamental period hc/e and is due to polarization of valence band electrons by vector potential field.
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页码：1275 / 1278
页数：4
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