SELECTIVE AREA DEPOSITION OF BORON ON SI(111) INDUCED BY SYNCHROTRON RADIATION

被引：61

作者：

ROSENBERG, RA

PERKINS, FK

MANCINI, DC

HARP, GR

TONNER, BP

LEE, S

DOWBEN, PA

机构：

[1] UNIV WISCONSIN,MAT SCI PROGRAM,MADISON,WI 53706

[2] UNIV WISCONSIN,DEPT PHYS,MILWAUKEE,WI 53201

[3] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.104571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed the first deposition of boron on Si(111) induced by broadband synchrotron radiation (SR). Contamination-free thin films were grown at room temperature using decaborane (B10H14) as the source gas. After deposition the films were examined using photoelectron microscopy, which showed that film growth was limited to the region illuminated by SR. The temperature of the substrate rose less than 10 K. These results indicate that gas-phase excitations are not important and that the films are deposited by a nonthermal, photoinduced mechanism. Masked exposures demonstrate the potential of this technique for patterned deposition.

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页码：607 / 609

页数：3

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