COMPARISONS OF GAAS, TUNGSTEN, AND PHOTORESIST ETCH RATES AND GAAS-SURFACES USING RIE WITH CF4, CF4 + N2, AND SF6 + N2 MIXTURES

被引：10

作者：

SUSA, N

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113660

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2762 / 2767

页数：6

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