1.52-MU-M ROOM-TEMPERATURE PHOTON-COUNTING OPTICAL-TIME DOMAIN REFLECTOMETER

被引：25
作者：
LEVINE, BF [1 ]
BETHEA, CG [1 ]
CAMPBELL, JC [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 05期
关键词：
D O I：
10.1049/el:19850137
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：194 / 196
页数：3
相关论文
共 13 条
[1]  
CAMPBELL JC, 1984, ELECTRON LETT, V20, P596
[2]   INVESTIGATION OF MICROPLASMAS IN INP AVALANCHE PHOTO-DIODES [J].
CAPASSO, F ;
PETROFF, PM ;
BONNER, WB ;
SUMSKI, S .
ELECTRON DEVICE LETTERS, 1980, 1 (03) :27-29
[3]   RAYLEIGH SCATTER MEASUREMENTS OF A 42 KM SINGLE-MODE FIBER AT 1.55 MU-M WAVELENGTH USING AN LD AND AN LN2 COOLED GE-PIN DETECTOR [J].
FUJISE, M ;
KUWAZURU, M .
ELECTRONICS LETTERS, 1984, 20 (06) :232-233
[4]   IMPROVED-DYNAMIC-RANGE SINGLE-MODE OTDR AT 1.3 MU-M [J].
GOLD, MP ;
HARTOG, AH .
ELECTRONICS LETTERS, 1984, 20 (07) :285-287
[5]   INFRARED PHOTON COUNTING BY GE AVALANCHE DIODES [J].
HAECKER, W ;
GROEZING.O ;
PILKUHN, MH .
APPLIED PHYSICS LETTERS, 1971, 19 (04) :113-&
[6]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].
HAITZ, RH ;
GOETZBERGER, A ;
SCARLETT, RM ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&
[7]   MECHANISMS CONTRIBUTING TO NOISE PULSE RATE OF AVALANCHE DIODES [J].
HAITZ, RH .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3123-&
[8]   OPTICAL-TIME DOMAIN REFLECTOMETRY - A PERFORMANCE COMPARISON OF THE ANALOG AND PHOTON-COUNTING TECHNIQUES [J].
HEALEY, P .
OPTICAL AND QUANTUM ELECTRONICS, 1984, 16 (03) :267-276
[9]   NEAR ROOM-TEMPERATURE 1.3-MU-M SINGLE PHOTON-COUNTING WITH A INGAAS AVALANCHE PHOTODIODE [J].
LEVINE, BF ;
BETHEA, CG ;
CAMPBELL, JC .
ELECTRONICS LETTERS, 1984, 20 (14) :596-598
[10]   OPTICAL-TIME DOMAIN REFLECTOMETER USING A PHOTON-COUNTING INGAAS/INP AVALANCHE PHOTODIODE AT 1.3-MU-M [J].
LEVINE, BF ;
BETHEA, CG ;
COHEN, LG ;
CAMPBELL, JC ;
MORRIS, GD .
ELECTRONICS LETTERS, 1985, 21 (02) :83-84
12