TRAPPING KINETICS IN HIGH TRAP DENSITY SILICON-NITRIDE INSULATORS

被引：12

作者：

BIBYK, SB ^{[1
]}

KAPOOR, VJ ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,SOLID STATE ELECTR LAB,CINCINNATI,OH 45221

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1070 / 1079

页数：10

共 32 条

[1]

Abramowitz M., 1965, HDB MATH FUNCTIONS

[2] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].

ARNETT, PC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243

[3] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J].

BAILEY, RS ;

KAPOOR, VJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :484-487

[4] PHOTO-IONIZATION CROSS-SECTION OF ELECTRON TRAPS IN SILICON-NITRIDE FILMS [J].

BIBYK, SB ;

KAPOOR, VJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7313-7316

[5]

BIBYK SB, 1983, P ELECTROCHEM SOC, P241

[6]

BIBYK SB, 1983, THESIS CASE W RESERV

[7] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].

DEAL, BE ;

MACKENNA, EL ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&

[8] STEADY-STATE ELECTRON AND HOLE SPACE-CHARGE DISTRIBUTION IN LPCVD SILICON-NITRIDE FILMS [J].

HAMPTON, FL ;

CRICCHI, JR .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :802-804

[9]

HAMPTON FL, 1979, 1979 IEEE INT EL DEV, P374

[10] HIGH-FIELD ELECTRONIC PROPERTIES OF SIO2 [J].

HUGHES, RC .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :251-258

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