ANION INCLUSIONS IN III-V SEMICONDUCTORS

被引：14

作者：

GANT, H ^{[1
]}

KOENDERS, L ^{[1
]}

BARTELS, F ^{[1
]}

MONCH, W ^{[1
]}

机构：

[1] UNIV DUISBURG,FESTKORPERPHYS LAB,D-4100 DUISBURG,FED REP GER

来源：

关键词：

D O I：

10.1063/1.94219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1032 / 1034

页数：3

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