ZUR KINETIK DER PHOTOLEITUNG IN SIC

[1] COMPARATOR METHOD FOR OPTICAL LIFETIME MEASUREMENTS ON SEMICONDUCTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (03) : 202 - 202

[2] Bube RH., 1960, PHOTOCONDUCTIVITY SO

[3] CHOLUJANOW GF, 1962, FIZ TVERD TELA, V4, P3170

[4] DIRECT READING MINORITY CARRIER LIFETIME MEASURING APPARATUS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (07) : 548 - 551

[5] ERIKSEN WT, 1960, INT C SILICON CARBID, P376

[6] FAN, 1954, PHYSICA, V20, P855

[7] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 606 - 615

[8] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[9] JUNGK G, PHYS STAT SOL

[10] LEHOVEC, 1953, PHYS REV, V89, P20

[1] COMPARATOR METHOD FOR OPTICAL LIFETIME MEASUREMENTS ON SEMICONDUCTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (03) : 202 - 202

[2] Bube RH., 1960, PHOTOCONDUCTIVITY SO

[3] CHOLUJANOW GF, 1962, FIZ TVERD TELA, V4, P3170

[4] DIRECT READING MINORITY CARRIER LIFETIME MEASURING APPARATUS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (07) : 548 - 551

[5] ERIKSEN WT, 1960, INT C SILICON CARBID, P376

[6] FAN, 1954, PHYSICA, V20, P855

[7] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 606 - 615

[8] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[9] JUNGK G, PHYS STAT SOL

[10] LEHOVEC, 1953, PHYS REV, V89, P20