1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS

被引：67
作者：
MIKOSHIBA, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/T-ED.1982.20815
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：965 / 970
页数：6
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