1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS

被引:67
作者
MIKOSHIBA, H
机构
关键词
D O I
10.1109/T-ED.1982.20815
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:965 / 970
页数:6
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