1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS

被引：67

|

作者：

MIKOSHIBA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/T-ED.1982.20815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：965 / 970

页数：6

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