EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS

被引：48

作者：

FANG, FF

HOWARD, WE

机构：

来源：

关键词：

D O I：

10.1063/1.1713424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：612 / &

共 11 条

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[2]

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[3]

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[4]

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[5]

GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213

[6]

HOWARD WA, TO BE PUBLISHED

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

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[8] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .

[9] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J].

MARINACE, JC .

NATHAN, MI ;

MARINACE, JC .

PHYSICAL REVIEW, 1962, 128 (05) :2149-+