OFF-STATE BREAKDOWN IN INALAS/INGAAS MODFETS

被引:51
作者
BAHL, SR
DELALAMO, JA
DICKMANN, J
SCHILDBERG, S
机构
[1] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY
[2] MIT,DEPT COMP SCI & ELECT ENGN,CAMBRIDGE,MA 02139
关键词
D O I
10.1109/16.370041
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent efforts are being focussed on improving the breakdown voltage (BV) of InAlAs/InGaAs MODFET's on InP towards high-power applications. A detailed understanding of the physics of breakdown in these devices is still lacking. In this work, we carry out a study of off-state breakdown on state-of-the-art MODFET's in this material system. Through a combination of a surface-depleted cap and mesa-sidewall isolation the devices have BV's of around 10 V. We find that BV shows a negative temperature coefficient and also decreases with a higher InAs mole fraction in the channel. As we have recently found in InAlAs/n(+)-InGaAs HFET's, off-state breakdown appears to be a two-step process. First, electrons are emitted by thermionic-field emission from the gate to the insulator. Second, as a consequence of the large electric field in the insulator and the substantial Delta E(C) between insulator and channel, they enter the channel hot, into the high-held drain-gate region, and relax their energy through impact-ionization. This combined hypothesis is able to explain why the MODFET breakdown voltage depends on both channel and insulator design parameters.
引用
收藏
页码:15 / 22
页数:8
相关论文
共 49 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   A NEW DRAIN-CURRENT INJECTION TECHNIQUE FOR THE MEASUREMENT OF OFF-STATE BREAKDOWN VOLTAGE IN FETS [J].
BAHL, SR ;
DELALAMO, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) :1558-1560
[3]   MESA-SIDEWALL GATE LEAKAGE IN INALAS INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].
BAHL, SR ;
LEARY, MH ;
DELALAMO, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2037-2043
[4]   ELIMINATION OF MESA-SIDEWALL GATE LEAKAGE IN INA1AS/INGAAS HETEROSTRUCTURES BY SELECTIVE SIDEWALL RECESSING [J].
BAHL, SR ;
DELALAMO, JA .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :195-197
[5]   DOUBLY STRAINED IN0.41AL0.59AS/N+-IN0.65GA0.35 AS HFET WITH HIGH BREAKDOWN VOLTAGE [J].
BAHL, SR ;
BENNETT, BR ;
DELALAMO, JA .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (01) :22-24
[6]  
BAHL SR, 1994, 5TH P INT C INP REL, P243
[7]   THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET [J].
BARTON, TM ;
LADBROOKE, PH .
SOLID-STATE ELECTRONICS, 1986, 29 (08) :807-813
[8]   INALAS/INGAAS/INP HEMTS WITH HIGH BREAKDOWN VOLTAGES USING DOUBLE-RECESS GATE PROCESS [J].
BOOS, JB ;
KRUPPA, W .
ELECTRONICS LETTERS, 1991, 27 (21) :1909-1910
[9]   THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS [J].
BRENNAN, K ;
WANG, T ;
HESS, K .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :199-201
[10]  
BROWN AS, 1989, P IEEE GAAS IC S, P143