HIGH-FIELD MINORITY ELECTRON-TRANSPORT IN P-GAAS

被引：0
作者：
FURUTA, T
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来源：
MINORITY CARRIERS IN III-V SEMICONDUCTORS: PHYSICS AND APPLICATIONS | 1993年 / 39卷
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T [工业技术];
学科分类号：
08 ;
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页码：151 / 192
页数：42
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