HALL-EFFECT IN MNAL FILMS

被引:7
作者
ANGADI, MA
THANIGAIMANI, V
机构
[1] Thin Film Laboratory, Department of Physics, The University of the West Indies, St. Augustine
关键词
D O I
10.1016/0040-6090(91)90253-T
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Hall effect is reported for MnAl films of different compositions and thicknesses in the range 25-150 nm. The ordinary Hall coefficient R(o) (- 70- + 55 x 10(-12) OMEGA-m T-1) and the extraordinary Hall coefficient R(s) (- 10- + 50 x 10(-12) OMEGA-m T-1) are of the same order of magnitude over the entire thickness range. Both R(o) and R(s) are positive for lower thicknesses, and negative for higher thicknesses. R(s.) is found to be proportional to the square of the total electrical resistivity. We report on the dependence of Hall coefficients on film thickness, composition and substrate temperature.
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页码:7 / 14
页数:8
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