MOBILITY-LIFETIME PRODUCTS IN HYDROGENATED AMORPHOUS-SILICON

被引:25
作者
CRANDALL, RS [1 ]
BALBERG, I [1 ]
机构
[1] HEBREW UNIV JERUSALEM,RACAH INST PHYS,IL-91904 JERUSALEM,ISRAEL
关键词
D O I
10.1063/1.104622
中图分类号
O59 [应用物理学];
学科分类号
摘要
The most important parameters characterizing the photoelectronic quality of a semiconductor are its charge-carrier mobility lifetime, mu-tau, products. The two common experimental methods used to determine these parameters in hydrogenated amorphous silicon, alpha-Si:H, are the steady-state photoconductivity measurement and the life-of-flight charge-collection measurement. The two methods yield quite different results. We show that the difference can be resolved by an understanding of the physics involved in each of the measurements. We show that the steady-state-mu-tau-is expected to be up to three orders of magnitude larger than the time-of-flight-mu-tau in undoped-alpha-Si:H. This prediction is in excellent agreement with the corresponding experimental results.
引用
收藏
页码:508 / 510
页数:3
相关论文
共 50 条
[41]   ELECTRON LOCALIZATION IN MODELS OF HYDROGENATED AMORPHOUS-SILICON AND PURE AMORPHOUS-SILICON [J].
HOLENDER, JM ;
MORGAN, GJ .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1994, 2 (01) :1-8
[42]   ON MOBILITY - LIFETIME PROBLEM AND ON QUANTUM EFFICIENCY OF PHOTOGENERATION IN AMORPHOUS-SILICON [J].
VANECEK, M ;
KOCKA, J ;
SIPEK, E ;
TRISKA, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :447-449
[43]   MOBILITY-LIFETIME PRODUCTS IN CUGASE2 [J].
BALBERG, I ;
ALBIN, D ;
NOUFI, R .
APPLIED PHYSICS LETTERS, 1989, 54 (13) :1244-1246
[44]   ANNEALING EFFECTS ON ELECTRON-DRIFT MOBILITY IN HYDROGENATED AMORPHOUS-SILICON [J].
YOON, JH ;
LEE, C .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4808-4810
[45]   PICOSECOND ELECTRON-DRIFT MOBILITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J].
SCHIFF, EA ;
DEVLEN, RI ;
GRAHN, HT ;
TAUC, J ;
GUHA, S .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1911-1913
[46]   DRIFT MOBILITY UNDER SINGLE AND DOUBLE INJECTION IN HYDROGENATED AMORPHOUS-SILICON [J].
XU, L ;
WINBORNE, G ;
SILVER, M ;
CANNELLA, V ;
MCGILL, J .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (06) :715-720
[47]   DRIFT MOBILITY AND STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].
WYRSCH, N ;
SHAH, A .
SOLID STATE COMMUNICATIONS, 1991, 80 (10) :807-809
[48]   DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
HVAM, JM ;
BRODSKY, MH .
PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374
[49]   KINETICS OF ANNEALING OF DANGLING BONDS IN SPUTTERED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON [J].
FUJITA, Y ;
YAMAGUCHI, M ;
MORIGAKI, K .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (01) :57-67
[50]   MOBILITY LIFETIME ESTIMATES IN AMORPHOUS HYDROGENATED SILICON (A-SI-H) [J].
SCHIFF, EA .
PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (02) :87-92