INGAAS JUNCTION FETS WITH FREQUENCY LIMIT (MAG = 1) ABOVE 30 GHZ

被引：10

作者：

SCHMITT, R

HEIME, K

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 10期

关键词：

D O I：

10.1049/el:19850320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / 451

页数：3

共 12 条

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J].

ARNOLD, N ;

SCHMITT, R ;

HEIME, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) :443-+

[2] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[3] TEMPERATURE-DEPENDENCE OF PEAK DRIFT VELOCITY AND THRESHOLD FIELD IN N-IN0.53GA0.47AS [J].

BHATTACHARYYA, A ;

GHOSAL, A ;

CHATTOPADHYAY, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1918-1919

[4] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J].

CHAI, YG ;

YEATS, R .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :252-254

[5] SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE [J].

CHENG, CL ;

LIAO, ASH ;

CHANG, TY ;

CARIDI, EA ;

COLDREN, LA ;

LALEVIC, B .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :511-514

[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J].

CHENG, CL ;

LIAO, ASH ;

CHANG, TY ;

LEHENY, RF ;

COLDREN, LA ;

LALEVIC, B .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :169-171

[7]

DAMBKES H, 1984, IEEE T ELECTRON DEV, V31, P1032

[8]

DAMBKES H, 1984, SPRINGER SERIES SOLI, V53

[9]

KONIG U, UNPUB J ELECTRON MAT

[10]

LEHENY RF, 1981, P INT ELECTRON DEVIC, P276

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