THRESHOLD AND SHEET CONCENTRATION SENSITIVITY OF HIGH ELECTRON-MOBILITY TRANSISTORS

被引：15

作者：

TIWARI, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 07期

关键词：

D O I：

10.1109/T-ED.1984.21625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：879 / 888

页数：10

共 15 条

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