AN ELECTRON-TRAPPING DEFECT LEVEL ASSOCIATED WITH THE 235-K ANNEALING STAGE IN ELECTRON-IRRADIATED NORMAL-GAAS

被引：19

作者：

REZAZADEH, AA ^{[1
]}

PALMER, DW ^{[1
]}

机构：

[1] UNIV SUSSEX,SCH MATH & PHYS SCI,BRIGHTON BN1 9QH,E SUSSEX,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 01期

关键词：

D O I：

10.1088/0022-3719/18/1/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：43 / 54

页数：12

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