A GAAS GATE HETEROJUNCTION FET

被引：98

作者：

SOLOMON, PM

KNOEDLER, CM

WRIGHT, SL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 09期

关键词：

D O I：

10.1109/EDL.1984.25953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / 381

页数：3

共 8 条

[1] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :90-92

[2] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].

HIKOSAKA, K ;

MIMURA, T ;

JOSHIN, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L847-L850

[3]

KIRCHNER P, 1983, THESIS CORNELL U ITH

[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[5] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[6]

MORKOC H, 1984, IEEE SPECTRUM, V21

[7] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J].

SOLOMON, PM ;

HICKMOTT, TW ;

MORKOC, H ;

FISCHER, R .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :821-823

[8]

1984, 1984 WOCSEMMAD SAN F

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