A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF EPITAXIAL SILICON LAYERS ON A GE(111) SURFACE

被引：10
|
作者：
TAKEISHI, Y
SASAKI, I
HIRABAYASHI, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1967年 / 11卷 / 10期
关键词：
D O I：
10.1063/1.1754999
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：330 / +
页数：1
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