A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF EPITAXIAL SILICON LAYERS ON A GE(111) SURFACE

被引：10

|

作者：

TAKEISHI, Y

SASAKI, I

HIRABAYASHI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 11卷 / 10期

关键词：

D O I：

10.1063/1.1754999

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：330 / +

页数：1

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