GAAS1-XPX INJECTION LASERS

[1] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[2] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[3] GONDA T, 1966, J QUANTUM ELECTRONIC, VQE 2, P74

[4] QUANTUM EFFICIENCY OF GAAS ELECTROLUMINESCENT DIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 721 - +

[5] KLEIN R, TO BE PUBLISHED

[6] MARUSKA HP, TO BE PUBLISHED

[7] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 684 - &

[8] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[1] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[2] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[3] GONDA T, 1966, J QUANTUM ELECTRONIC, VQE 2, P74

[4] QUANTUM EFFICIENCY OF GAAS ELECTROLUMINESCENT DIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 721 - +

[5] KLEIN R, TO BE PUBLISHED

[6] MARUSKA HP, TO BE PUBLISHED

[7] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 684 - &

[8] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &