GAAS1-XPX INJECTION LASERS

被引:0
作者
PANKOVE, JI
NELSON, H
TIETJEN, JJ
HEGYI, IJ
MARUSKA, HP
机构
来源
RCA REVIEW | 1967年 / 28卷 / 04期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:560 / &
相关论文
共 8 条
[1]   TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].
DOUSMANIS, GC ;
STAEBLER, DL ;
NELSON, H .
APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&
[2]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[3]  
GONDA T, 1966, J QUANTUM ELECTRONIC, VQE 2, P74
[4]   QUANTUM EFFICIENCY OF GAAS ELECTROLUMINESCENT DIODES [J].
HERZOG, AH .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :721-+
[5]  
KLEIN R, TO BE PUBLISHED
[6]  
MARUSKA HP, TO BE PUBLISHED
[7]   ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X [J].
PILKUHN, M ;
RUPPRECHT, H .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) :684-&
[8]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].
TIETJEN, JJ ;
AMICK, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&