GROWTH AND ETCHING OF SI THROUGH WINDOWS IN SIO2

被引：36

作者：

OLDHAM, WG

HOLMSTROM, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 04期

关键词：

D O I：

10.1149/1.2426601

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：381 / +

页数：1

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