PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY

被引：37

作者：

BALLAMY, WC

CHO, AY

机构：

[1] BELL TEL LABS INC,READING,PA 19604

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1109/T-ED.1976.18431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 484

页数：4

共 10 条

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CHO, AY ;

BALLAMY, WC .

[3]

CHO AY, 1971, J VAC SCI TECHNOL, V8, P531

[4] STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS [J].

DAVEY, JE ;

PANKEY, T .

[5]

ISHIBASHI Y, 1970, JPN J APPL PHYS, V9, P1007

[6]

LABUDA EF, MAY EL SOC SPRING M

[7]

REDLINE DC, UNPUBLISHED

[8]

SATO Y, 1972, ELECTRON COMMUN JPN, V55, P93

[9] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES [J].

SHAW, DW .

SHAW, DW .