HIGH FIELD CHARGE CARRIER TRANSPORT IN SILVER HALIDES AT LOW TEMPERATURES

被引：9
|
作者：
MATZ, D
GARCIAMO.F
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1965年 / 26卷 / 03期
关键词：
D O I：
10.1016/0022-3697(65)90131-9
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：551 / &
相关论文
共 50 条
  • [21] On the nature of charge carrier scattering in Ag2Se at low temperatures
    M. B. Jafarov
    Semiconductors, 2010, 44 : 1280 - 1284
  • [22] On the Nature of Charge Carrier Scattering in Ag2Se at Low Temperatures
    Jafarov, M. B.
    SEMICONDUCTORS, 2010, 44 (10) : 1280 - 1284
  • [23] Alloying Effects on Charge-Carrier Transport in Silver-Bismuth Double Perovskites
    Righetto, Marcello
    Caicedo-Davila, Sebastian
    Sirtl, Maximilian T.
    Lim, Vincent J. -Y.
    Patel, Jay B.
    Egger, David A.
    Bein, Thomas
    Herz, Laura M.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (46) : 10340 - 10347
  • [24] Charge carrier transport in polyvinylcarbazole
    Tyutnev, Andrey P.
    Saenko, Vladimir S.
    Pozhidaev, Evgenii D.
    Kolesnikov, Vladislav A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (27) : 6365 - 6377
  • [25] CHARGE CARRIER TRANSPORT IN ZNO
    KIESS, H
    PHOTOGRAPHIC SCIENCE AND ENGINEERING, 1974, 18 (05): : 591 - 591
  • [26] HIGH-FIELD CARRIER TRANSPORT IN INHOMOGENEOUS SEMICONDUCTORS
    BOER, KW
    ANNALEN DER PHYSIK, 1985, 42 (4-6) : 371 - 393
  • [27] Charge transport and electrode polarization in epoxy resin at high temperatures
    Tian, Fuqiang
    Ohki, Yoshimichi
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (04)
  • [28] DEFECT PROPERTIES AND THEIR TRANSPORT IN SILVER-HALIDES
    LASKAR, AL
    POPSON, GA
    STANLEY, MK
    FINKERNAGEL, B
    JOURNAL OF IMAGING SCIENCE, 1990, 34 (03): : 98 - 101
  • [29] TRUE LOW-FIELD HALL-COEFFICIENT OF HIGH-PURITY SILVER AND SILVER CONTAINING LOW-DENSITY DEFECTS AT LOW-TEMPERATURES
    BARNARD, RD
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1977, 7 (04): : 673 - 691
  • [30] High field transport properties of ZnS at different temperatures
    Zhao, H
    Wang, YS
    Hou, YB
    Xu, Z
    Xu, XR
    ACTA PHYSICA SINICA, 2000, 49 (05) : 954 - 958
12345