LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS

被引：52

作者：

DONAHUE, TJ

REIF, R

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2108995

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1691 / 1697

页数：7

共 16 条

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[4]

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[5]

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DONAHUE, TJ ;

REIF, R .

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[7]

DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[8] ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

HOTTIER, F ;

CADORET, R .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :245-258

[9]

KERN W, 1970, RCA REV, V31, P187

[10] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J].

OTA, Y .

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