OPTICAL STUDIES OF GERMANIUM IMPLANTED WITH HIGH-DOSE OXYGEN

被引:15
|
作者
ZHANG, QC [1 ]
KELLY, JC [1 ]
MILLS, DR [1 ]
机构
[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA
关键词
D O I
10.1063/1.346135
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model has been developed to explain the greatly reduced reflectivities of Ge samples implanted to doses 1.25-1.5×1018 O/cm2 with 45-keV O+ ions, which have reflectivity values close to zero at 0.7 μm. The model divides the inhomogeneous implanted layer into a series of homogeneous sublayers with different volume fraction and thickness for each sublayer. The complex refractive indexes for every sublayer are calculated using the Maxwell Garnett (MG) and Persson-Liebsch (PL) theories. Using the expressions for the reflectivity of an absorbing multilayer layer systems, the reflectivities have been calculated. The reflectivity curve calculated in the PL approximation is closer to the experimental observations than is the MG approximation over the wavelength range 0.2-3.0 μm.
引用
收藏
页码:4788 / 4794
页数:7
相关论文
共 50 条
  • [41] METALLIC ALLOY PRECIPITATES IN HIGH-DOSE INDIUM IMPLANTED MGO
    PEREZ, A
    TREILLEUX, M
    FRITSCH, L
    MAREST, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 64 (1-4): : 199 - 203
  • [42] Recrystallization behavior of high-dose Mn+-implanted GaAs
    Wang, J
    Li, Z
    Cai, W
    Miao, Z
    Chen, X
    Lu, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (06): : 975 - 978
  • [43] High-dose phenomena in zinc-implanted silicon crystals
    Simov, S
    Kalitzova, M
    Karpuzov, D
    Yankov, R
    Angelov, C
    Faure, J
    Bonhomme, P
    Balossier, G
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3470 - 3476
  • [44] PERTURBED ANGULAR-CORRELATION ASSOCIATED WITH OPTICAL-ABSORPTION FOR THE STUDY OF HIGH-DOSE IN IMPLANTED LIF
    PEREZ, A
    DAVENAS, J
    DUPIN, JP
    MAREST, G
    HAROUTUNIAN, R
    NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 441 - 447
  • [45] Recrystallization behavior of high-dose Mn+-implanted GaAs
    J. Wang
    Z. Li
    W. Cai
    Z. Miao
    P. Chen
    X. Chen
    W. Lu
    Applied Physics A, 2003, 76 : 975 - 978
  • [46] Mechanical reliability studies of optical fibres under high-dose gamma radiation
    Van Uffelen, Marco
    El Shazly, Yehia
    Kukureka, Stephen
    Kuyt, Gerard
    Regnier, Elise
    Matthijsse, Piet
    Berghmans, Francis
    RELIABILITY OF OPTICAL FIBER COMPONENTS, DEVICES, SYSTEMS, AND NETWORKS III, 2006, 6193
  • [47] FURTHER STUDIES ON IMPLANTED HIGH-PURITY GERMANIUM DETECTORS
    PONPON, JP
    STUCK, R
    SIFFER, P
    KALBITZER, S
    HERZER, H
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (03) : 281 - +
  • [48] DISORDER IN HIGH-DOSE, HIGH-ENERGY O-IMPLANTED AND SI-IMPLANTED SI
    ELLINGBOE, SL
    RIDGWAY, MC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2) : 636 - 639
  • [49] Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)
    Nippon Steel Corp, Sagamihara, Japan
    Appl Surf Sci, 1-4 (259-264):
  • [50] BURIED-OXIDE LAYER FORMATION BY HIGH-DOSE OXYGEN-ION IMPLANTATION INTO SI WAFERS - SIMOX (SEPARATION BY IMPLANTED OXYGEN)
    KAJIYAMA, K
    APPLIED SURFACE SCIENCE, 1995, 85 (1-4) : 259 - 264