CALCULATION OF ELECTRON-EMISSION YIELDS FOR ENERGIES 10-12 KEV IN GE, GAAS AND GAALAS

被引：0
|
作者：
BOUABELLOU, A
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1991年 / 47卷 / 258期
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have carried out a theoretical study of the X-ray photoelectric effect for solid photocathodes. Analytic expression of electron emission yield in impulses K(i) was established for materials having low secondary electrons emission. The experimental measurements of the quantum yield jumps from Ge, GaAs and GaAlAs thin films are compared with the predicted values at excitation energies close to K-shell in Ge, Ga and As.
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页码：247 / 254
页数：8
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