EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES

被引：22

作者：

CRONIN, GR

CONRAD, RW

BORELLO, SR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 12期

关键词：

D O I：

10.1149/1.2423819

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1336 / &

共 11 条

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ANTELL, GR .

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[5] PREPARATION OF HIGH-PURITY INDIUM ARSENIDE [J].

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[6]

EWING RE, 1964, SCP SOLID STATE TECH, V111, P1266

[7] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C [J].

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[8] PREPARATION OF INDIUM ARSENIDE [J].

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[9]

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[10]

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