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EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES
被引:21
作者
:
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
BORELLO, SR
论文数:
0
引用数:
0
h-index:
0
BORELLO, SR
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1966年
/ 113卷
/ 12期
关键词
:
D O I
:
10.1149/1.2423819
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1336 / &
相关论文
共 11 条
[1]
PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
ANTELL, GR
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1959,
106
(06)
: 509
-
511
[2]
THE GROWTH OF CRYSTALS FROM COMPOUNDS WITH VOLATILE COMPONENTS
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
JONES, ME
论文数:
0
引用数:
0
h-index:
0
JONES, ME
WILSON, O
论文数:
0
引用数:
0
h-index:
0
WILSON, O
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 582
-
584
[3]
EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(10)
: 1020
-
&
[4]
PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
ANTELL, GR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(03)
: 252
-
253
[5]
PREPARATION OF HIGH-PURITY INDIUM ARSENIDE
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(04)
: 357
-
361
[6]
EWING RE, 1964, SCP SOLID STATE TECH, V111, P1266
[7]
EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 821
-
824
[8]
PREPARATION OF INDIUM ARSENIDE
HARADA, RH
论文数:
0
引用数:
0
h-index:
0
HARADA, RH
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(01)
: 121
-
121
[9]
KROGER FA, 1964, CHEMISTRY IMPERFECT
[10]
LENIE CA, 1964, SCP SOLID STATE TECH, V7, P41
←
1
2
→
共 11 条
[1]
PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
ANTELL, GR
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1959,
106
(06)
: 509
-
511
[2]
THE GROWTH OF CRYSTALS FROM COMPOUNDS WITH VOLATILE COMPONENTS
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
JONES, ME
论文数:
0
引用数:
0
h-index:
0
JONES, ME
WILSON, O
论文数:
0
引用数:
0
h-index:
0
WILSON, O
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 582
-
584
[3]
EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(10)
: 1020
-
&
[4]
PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
ANTELL, GR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(03)
: 252
-
253
[5]
PREPARATION OF HIGH-PURITY INDIUM ARSENIDE
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(04)
: 357
-
361
[6]
EWING RE, 1964, SCP SOLID STATE TECH, V111, P1266
[7]
EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 821
-
824
[8]
PREPARATION OF INDIUM ARSENIDE
HARADA, RH
论文数:
0
引用数:
0
h-index:
0
HARADA, RH
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(01)
: 121
-
121
[9]
KROGER FA, 1964, CHEMISTRY IMPERFECT
[10]
LENIE CA, 1964, SCP SOLID STATE TECH, V7, P41
←
1
2
→