A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

被引:1
|
作者
Roy, Apratim [1 ]
Rashid, S. M. S. [1 ]
机构
[1] BUET, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
来源
OPEN ENGINEERING | 2012年 / 2卷 / 03期
关键词
Bandwidth regulation; Wideband amplifier; High gain; 90; nm;
D O I
10.2478/s13531-012-0009-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, a single-stage deep sub-micron wideband amplifier (LNA) using a reactive resonance tank and passive port-matching techniques is demonstrated operating in the microwave frequency range (K band). A novel power-efficient bandwidth (BW) regulation technique is proposed by incorporating a small impedance in the resonance tank of the amplifier configuration. It manifests a forward gain in the range of 5.9-10.7 dB covering a message bandwidth of 10.6-6.3 GHz. With regulation, input-output reflection parameters (S-11, S-22) and noise figure can be manipulated by -12.7 dB, -22.7 dB and 0.36 dB, respectively. Symmetric regulation is achieved for bandwidth and small signal gain with respect to moderate tank impedance (36.5% and -26.8%, respectively) but the effect on noise contribution remains relatively low ( increase of 7% from a base value of 2.39 dB). The regulated architecture, when analyzed with 90 nm silicon CMOS process, supports low power (9.1 mW) on-chip communication. The circuit is tested with a number of combinations for tank (drain) impedance to verify the efficiency of the proposed technique and achieves better figures of merit when compared with published literature.
引用
收藏
页码:383 / 391
页数:9
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