LOW-TEMPERATURE IMPURITY BREAKDOWN IN AMORPHOUS CDGEAS2 FILMS DOPED WITH NI

被引：0

作者：

OKUNEV, VD

PAFOMOV, NN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 07期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：822 / 825

页数：4

共 18 条

[1]

Aver'yanov V. L., 1980, Soviet Technical Physics Letters, V6, P249

[2]

AVERYANOV VL, 1983, SOV PHYS SEMICOND+, V17, P223

[3]

AVERYANOV VL, 1983, SOV PHYS SEMICOND+, V17, P582

[4]

BONCHBRUEVICH VL, 1981, ELECTRONIC THEORY DI

[5] BEHAVIOR OF IMPURITIES IN AMORPHOUS CDGEAS2 [J].

BRATASHEVSKII, YA ;

OKUNEV, VD .

SOLID STATE COMMUNICATIONS, 1984, 52 (12) :981-983

[6] THEORY OF POOLE-FRENKEL CONDUCTION IN LOW-MOBILITY SEMICONDUCTORS [J].

CONNELL, GAN ;

CAMPHAUSEN, DL ;

PAUL, W .

PHILOSOPHICAL MAGAZINE, 1972, 26 (03) :541-+

[7]

FLASCK R, 1977, 7TH P INT C AM LIQ S, P524

[8] ELECTRICAL AND OPTICAL-PROPERTIES OF CHALCOGENIDE AMORPHOUS-SEMICONDUCTORS MODIFIED WITH NI [J].

GOMI, T ;

HIROSE, Y ;

KUROSU, T ;

SHIRAISHI, T ;

IIDA, M ;

GEKKA, Y ;

KUNIOKA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 41 (01) :37-46

[9]

Korol' E. N., 1977, Soviet Physics - Solid State, V19, P1327

[10]

MAMEDOV A, 1980, PISMA ZH TEKH FIZ, V6, P240

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