Two New Low-Power and High-Performance Full Adders

被引:0
|
作者
Moaiyeri, Mohammad Hossein [1 ]
Mirzaee, Reza Faghih [1 ]
Navi, Keivan [2 ]
机构
[1] Islamic Azad Univ, Dept Comp Engn, Sci & Res Branch, Tehran, Iran
[2] Shahid Beheshti Univ, Fac Elect & Comp Engn, GC, Tehran, Iran
关键词
Full Adder Cell; Majority-not Gate; Low-Power; High-Performance; Power-Delay Product;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Two new low-power, and high-performance 1-bit Full Adder cells are proposed in this paper. These cells are based on low-power XOR/XNOR circuit and Majority-not gate. Majority-not gate, which produces Cout (Output Carry), is implemented with an efficient method, using input capacitors and a static CMOS inverter. This kind of implementation benefits from low power consumption, a high degree of regularity and simplicity. Eight state-of-the-art 1-bit Full Adders and two proposed Full Adders are simulated with HSPICE using 0.18 mu m CMOS technology at several supply voltages ranging from 2.4v down to 0.8v. Although low power consumption is targeted in implementation of our designs, simulation results demonstrate great improvement in terms of power consumption and also PDP.
引用
收藏
页码:119 / 126
页数:8
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