ELECTRON-TRANSPORT IN SUB-MICRON GAAS-CHANNELS AT 300-K

被引：10

作者：

NAG, BR ^{[1
]}

ROY, MD ^{[1
]}

机构：

[1] JADAVPUR UNIV, DEPT PHYS, CALCUTTA 700032, W BENGAL, INDIA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 02期

关键词：

D O I：

10.1007/BF00616306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：65 / 70

页数：6

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